semix251gd126hds ? by semikron rev. 0 ? 16.04.2010 1 semix ? 13 gd trench igbt modules semix251gd126hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welding remarks ? case temperatur limited to t c =125c max. ? not for new design absolute maximum ratings symbol conditions values unit igbt v ces 1200 v i c t j = 150 c t c =25c 242 a t c =80c 170 a i cnom 150 a i crm i crm = 2xi cnom 300 a v ges -20 ... 20 v t psc v cc = 600 v v ge 20 v v ces 1200 v t j = 125 c 10 s t j -40 ... 150 c inverse diode i f t j = 150 c t c =25c 207 a t c =80c 143 a i fnom 150 a i frm i frm = 2xi fnom 300 a i fsm t p = 10 ms, sin 180, t j =25c 1000 a t j -40 ... 150 c module i t(rms) 600 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =150a v ge =15v chiplevel t j =25c 1.7 2.1 v t j = 125 c 22.45v v ce0 t j =25c 11.2v t j = 125 c 0.9 1.1 v r ce v ge =15v t j =25c 4.7 6.0 m ? t j = 125 c 7.3 9.0 m ? v ge(th) v ge =v ce , i c =6ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 125 c ma c ies v ce =25v v ge =0v f=1mhz 10.8 n f c oes f=1mhz 0.56 nf c res f=1mhz 0.49 nf q g v ge =- 8 v...+ 15 v 1200 nc r gint t j =25c 5.00 ? t d(on) v cc = 600 v i c =150a r g on =1 ? r g off =1 ? t j = 125 c 250 n s t r t j = 125 c 45 ns e on t j = 125 c 19 mj t d(off) t j = 125 c 525 n s t f t j = 125 c 100 n s e off t j = 125 c 22 mj r th(j-c) per igbt 0.15 k/w
semix251gd126hds 2 rev. 0 ? 16.04.2010 ? by semikron characteristics symbol conditions min. typ. max. unit inverse diode v f = v ec i f =150a v ge =0v chip t j =25c 1.6 1.80 v t j = 125 c 1.6 1.8 v v f0 t j =25c 0.9 1 1.1 v t j = 125 c 0.7 0.8 0.9 v r f t j =25c 3.3 4.0 4.7 m ? t j = 125 c 4.7 5.3 6.0 m ? i rrm i f =150a di/dt off = 3950 a/s v ge =-15v v cc = 600 v t j = 125 c 190 a q rr t j = 125 c 35 c e rr t j = 125 c 14.5 mj r th(j-c) per diode 0.28 k/w module l ce 20 nh r cc'+ee' res., terminal-chip t c =25c 0.7 m ? t c = 125 c 1m ? r th(c-s) per module 0.04 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 350 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k semix ? 13 gd trench igbt modules semix251gd126hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ? ac inverter drives ?ups ? electronic welding remarks ? case temperatur limited to t c =125c max. ? not for new design
semix251gd126hds ? by semikron rev. 0 ? 16.04.2010 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
semix251gd126hds 4 rev. 0 ? 16.04.2010 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: typ. transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: typ. cal diode peak reverse recovery current fig. 12: typ. cal diode recovery charge
semix251gd126hds ? by semikron rev. 0 ? 16.04.2010 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may not be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. t he use of semikron products in life support appliances and syste ms is subject to prior specification and written approval by semikron . we therefore strongly recommend prior consultation of our pers onal. semix 13 spring configuration
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